Eng/Bench
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Pro adds paralleled devices, backward design limits (max ambient, required heatsink) and the runaway sweep.

Junction/Temp MOSFET junction temperature calculator

MOSFET loss and junction temperature solved together. Rds(on) rises with temperature, which raises loss, which raises temperature; this solves that loop for you and flags thermal runaway.

Operating point
A
%
V
kHz
×
MOSFET (per device, from datasheet)
mΩ
×
ns
pF
ns
V
Thermal path
°C/W
°C/W
°C/W
°C
°C
——

    Junction temperature vs load current PRO

    Each point is a converged solution. Where the curve stops, the loop no longer settles: the device runs away thermally at that current.

    Pastes as plain text.
    Conduction loss uses I²·Rds(on)(Tj)·D with Rds(on) scaled exponentially from the datasheet 25 °C and 125 °C values. Switching loss uses the linear overlap estimate ½·V·I·(tr+tf)·fsw, plus ½·Coss·V²·fsw and body-diode conduction Vf·I·t·fsw. Current is assumed to share equally between paralleled devices on one heatsink. These are first-order estimates: verify with the datasheet's switching-energy curves and a thermal measurement.

    Why MOSFET temperature needs solving, not just calculating

    A MOSFET's on-resistance rises as it heats up, typically 1.5–2× from 25 °C to 125 °C. Higher resistance means more conduction loss, which means more heat. This calculator iterates that loop until it settles, and tells you when it doesn't, which is thermal runaway.

    Worked example: 48 V motor drive

    A 4.5 mΩ MOSFET carrying 30 A at 50% duty, switching 48 V at 20 kHz, heats until its on-resistance reaches about 5.4 mΩ. Conduction loss is about 2.45 W and switching loss about 0.86 W, for 3.55 W in total. On a 1.5 °C/W heatsink with an insulating pad at 50 °C ambient, the junction settles at about 61 °C.

    Good to know

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